发明名称 METHODS FOR INTEGRATING LEAD AND GRAPHENE GROWTH AND DEVICES FORMED THEREFROM
摘要 Methods for forming integrated graphite-based structures with interconnections between leads and graphene layers are provided. A substrate is patterned to form a plurality of elements on the substrate. A trench separates a first element from an adjacent element in the plurality of elements. A lead is deposited on a side wall of the first element, and a layer from the top of the first element is removed to expose a portion of the lead. Both the deposition of the lead and removal of a layer from the top of the first element are conducted before generation of graphene layers on the top of the first element and the bottom of the trench. Thus, an integrated graphite-based structure having spatially isolated but electrically connected graphene layers is formed.
申请公布号 WO2014110450(A2) 申请公布日期 2014.07.17
申请号 WO2014US11155 申请日期 2014.01.10
申请人 SOLAN, LLC;DAVIS, MARK, ALAN 发明人 DAVIS, MARK, ALAN
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
主权项
地址