| 摘要 |
A method for growing a sapphire single crystal according to the present invention includes a charging step in which a sapphire single crystal seed and an alumina material are charged in a crucible; a growing step in which the temperature of the crucible is increased for the growth of a sapphire ingot; and a cooling step in which the sapphire ingot is cooled to a room temperature after the growth of the sapphire ingot is completed. The cooling step has a first cooling step in which cooling is performed at a constant cooling rate to a first target temperature lower than 2,050°C; a primary maintaining step in which the first target temperature is maintained for a predetermined period of time after the first target temperature is reached; a second cooling step in which cooling is performed at a constant cooling rate to a second target temperature lower than the first target temperature after the primary maintaining step is completed; and a secondary maintaining step in which the second target temperature is maintained for a predetermined period of time after the second target temperature is reached. The cooling steps and the maintaining steps are configured to be repeated multiple times during the cooling, and thus the cooling time can be shortened while crack generation can be suppressed. |
