| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element manufacturing method which can improve light extraction efficiency.SOLUTION: A semiconductor light-emitting element manufacturing method comprises: a process of forming a first laminated film on a first substrate 10, in which an n-type nitride semiconductor layer 14, an active layer 16 having a multiquantum well structure of nitride semiconductors, and a p-type nitride semiconductor layer 18 are laminated in this order; a process of forming a contact electrode 20 on a top face of the p-type nitride semiconductor layer; a process of bonding the first substrate and a second substrate 30; a process of removing the first substrate and forming a second laminated film on the second substrate, in which layers are laminated in reverse order of the first laminated order; a process of wet etching the n-type nitride semiconductor layer by using an alkaline solution thereby to form a concavo-convex region in the n-type nitride semiconductor layer; a process of forming an n electrode; and a process of patterning the second laminated film so as to have a cross section of a tapered shape where an area of a film surface increases with distance from a top face toward an undersurface.</p> |
