SCALED EQUIVALENT OXIDE THICKNESS FOR FIELD EFFECT TRANSISTOR DEVICES

摘要

A field effect transistor device includes a first gate stack portion including a dielectric layer disposed on a substrate, a first TiN layer disposed on the dielectric layer, a metallic layer disposed on the dielectric layer, and a second TiN layer disposed on the metallic layer, a first source region disposed adjacent to the first gate stack portion, and a first drain region disposed adjacent to the first gate stack portion.

主权项

1. A method of forming field effect transistor (FET) device, the method comprising:
forming a first gate stack portion and a second gate stack portion on a substrate; the first gate stack portion further comprising a first interfacial (IL) layer formed on the substrate, a dielectric layer formed on the first IL layer, a stoichiometric TiN layer formed over the dielectric layer, and a capping layer formed over the stoichiometric TiN layer; and the second gate stack portion further comprising a second IL layer formed on the substrate, the dielectric layer formed on the second IL layer, the stoichiometric TiN layer formed over the dielectric layer, and the capping layer formed over the stoichiometric TiN layer; wherein the second IL layer has a reduced oxygen content and an increased silicon content with respect to the first IL layer such that an equivalent oxide thickness (EOT) of the second gate stack portion is reduced with respect to the first gate stack portion.