VARIABLE-RESISTANCE MATERIAL MEMORIES AND METHODS

摘要

Variable-resistance memory material cells are contacted by vertical bottom spacer electrodes. Variable-resistance material memory spacer cells are contacted along the edge by electrodes. Processes include the formation of the bottom spacer electrodes as well as the variable-resistance material memory spacer cells. Devices include the variable-resistance memory cells.

主权项

1. A method of forming a memory device, comprising:
forming a dielectric on a semiconductive substrate; forming a first electrode against the dielectric; forming a variable resistance material coupled to the first electrode, wherein a first minor-axis surface of the first electrode forms an interface with the variable resistance material; and forming a second electrode coupled to the variable resistance material.