发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device which can retain memory contents even in a situation where power is not supplied and which has no limits in the number of write times.SOLUTION: A semiconductor device comprises: a plurality of memory cells arranged in a matrix and each including a first transistor, a second transistor and a capacitative element 164; an interconnection (also referred to as a bit line) for connecting one memory cell with the other memory cell; a source electrode or drain electrodes 142a, 142b in the first transistor, which are electrically connected with each other via a source electrode or drain electrodes 142a, 142b in the second transistor.</p>
申请公布号 JP2014132663(A) 申请公布日期 2014.07.17
申请号 JP20140010475 申请日期 2014.01.23
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KATO KIYOSHI;NAGATSUKA SHUHEI;INOUE HIROKI;MATSUZAKI TAKANORI
分类号 H01L21/8242;H01L21/336;H01L21/8234;H01L21/8247;H01L27/06;H01L27/088;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792 主分类号 H01L21/8242
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