发明名称 |
METHOD OF FABRICATING CAPACITOR STRUCTURE |
摘要 |
A method of fabricating a capacitor structure includes the following steps. Firstly, a substrate is provided. A first conductive layer, a first insulation layer, a second conductive layer and a second insulation layer are sequentially formed over the substrate. A hard mask material layer is formed on the second insulation layer. Then, the hard mask material layer is defined with a photo resist pattern, so that a hard mask is formed. After the photo resist pattern is removed, the second conductive layer is defined with the hard mask, so that a first electrode of the capacitor structure is formed. |
申请公布号 |
US2014199819(A1) |
申请公布日期 |
2014.07.17 |
申请号 |
US201313742359 |
申请日期 |
2013.01.16 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
CHANG Pao-Chu |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of fabricating a capacitor structure, the method comprising steps of:
providing a substrate; sequentially forming a first conductive layer, a first insulation layer, a second conductive layer and a second insulation layer over the substrate; forming a hard mask material layer on the second insulation layer; defining the hard mask material layer with a photo resist pattern, thereby forming a hard mask; removing the photo resist pattern; and defining the second conductive layer with the hard mask, thereby forming a first electrode of the capacitor structure. |
地址 |
HSINCHU TW |