发明名称 METHOD OF FABRICATING CAPACITOR STRUCTURE
摘要 A method of fabricating a capacitor structure includes the following steps. Firstly, a substrate is provided. A first conductive layer, a first insulation layer, a second conductive layer and a second insulation layer are sequentially formed over the substrate. A hard mask material layer is formed on the second insulation layer. Then, the hard mask material layer is defined with a photo resist pattern, so that a hard mask is formed. After the photo resist pattern is removed, the second conductive layer is defined with the hard mask, so that a first electrode of the capacitor structure is formed.
申请公布号 US2014199819(A1) 申请公布日期 2014.07.17
申请号 US201313742359 申请日期 2013.01.16
申请人 UNITED MICROELECTRONICS CORPORATION 发明人 CHANG Pao-Chu
分类号 H01L49/02 主分类号 H01L49/02
代理机构 代理人
主权项 1. A method of fabricating a capacitor structure, the method comprising steps of: providing a substrate; sequentially forming a first conductive layer, a first insulation layer, a second conductive layer and a second insulation layer over the substrate; forming a hard mask material layer on the second insulation layer; defining the hard mask material layer with a photo resist pattern, thereby forming a hard mask; removing the photo resist pattern; and defining the second conductive layer with the hard mask, thereby forming a first electrode of the capacitor structure.
地址 HSINCHU TW