| 主权项 |
1. A III-N semiconductor device, comprising:
an electrode-defining layer having a thickness on a surface of a III-N material structure, the electrode-defining layer having a recess with a sidewall, the sidewall comprising a plurality of steps, wherein a portion of the recess distal from the III-N material structure has a first width, and a portion of the recess proximal to the III-N material structure has a second width, the first width being larger than the second width; and an electrode in the recess, the electrode including an extending portion over the sidewall, a portion of the electrode-defining layer being between the extending portion and the III-N material structure; wherein at least one of the steps in the sidewall has a first surface that is substantially parallel to the surface of the III-N material structure and a second surface that is slanted; and the sidewall forms an effective angle of about 40 degrees or less relative to the surface of the III-N material structure. |
