发明名称 |
METHOD OF FORMING HIGH VOLTAGE DEVICE |
摘要 |
A method of forming a device includes forming a buried well region of a first dopant type in a substrate. A well region of the first dopant type is formed over the buried well region. A first well region of a second dopant type is formed between the well region of the first dopant type and the buried well region of the first dopant type. A second well region of the second dopant type is formed in the well region of the first dopant type. An isolation structure is formed at least partially in the well region of the first dopant type. A first gate electrode is formed over the isolation structure and the second well region of the second dopant type. |
申请公布号 |
US2014197488(A1) |
申请公布日期 |
2014.07.17 |
申请号 |
US201414212081 |
申请日期 |
2014.03.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHENG Chih-Chang;LIU Ruey-Hsin;YAO Chih-Wen;SHEN Chia-Chin;HUANG Eric;YANG Fu Chin;TSAI Chun Lin;HSIAO Chin Tuan |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a device, the method comprising:
forming a buried well region of a first dopant type in a substrate; forming a well region of the first dopant type over the buried well region; forming a first well region of a second dopant type between the well region of the first dopant type and the buried well region of the first dopant type; forming a second well region of the second dopant type in the well region of the first dopant type; forming an isolation structure at least partially in the well region of the first dopant type; and forming a first gate electrode over the isolation structure and the second well region of the second dopant type. |
地址 |
Hsinchu TW |