| 摘要 |
PROBLEM TO BE SOLVED: To provide a heterostructure field effect transistor comprising a semiconductor wire.SOLUTION: A semiconductor wire 2 comprises: in a longitudinal direction L, a source region 1001, a drain region 1003, and a channel region 1002 in between the source region 1001 and the drain region 1003; in a direction T traversing the source region 1001, a source core region 101, and a source shell region 201 disposed around the source core region 101 and having a thickness t; in a direction T traversing the drain region 1003, a drain core region 103, and a drain shell region 203 disposed around the drain core region 103 and having a thickness t; and in a direction T traversing the channel region 1002, a channel core region 102, and a channel shell region 202 disposed around the channel core region 102 and having a thickness of t. The thickness tof the channel shell region 202 is smaller than the thickness tof the source shell region 201 and the thickness tof the drain shell region 203. |
