Non-Volatile Storage System Using Opposite Polarity Programming Signals For MIM Memory Cell

摘要

A reversible resistance-switching metal-insulator-metal (MIM) stack is provided which can be set to a low resistance state with a first polarity signal and reset to a higher resistance state with a second polarity signal. The first polarity signal is opposite in polarity than the second polarity signal. In one approach, the MIM stack includes a carbon-based reversible resistivity switching material such as a carbon nanotube material. The MIM stack can further include one or more additional reversible resistivity switching materials such as metal oxide above and/or below the carbon-based reversible resistivity switching material. In another approach, a metal oxide layer is between separate layers of carbon-based reversible resistivity switching material.

主权项

1. A non-volatile storage apparatus, comprising:
a monolithic three dimensional array of non-volatile storage elements arranged in blocks; and control circuitry in communication with the non-volatile storage elements, the control circuitry sets the non-volatile storage elements to a low resistance state with a first polarity signal and resets the non-volatile storage elements to a higher resistance state with a second polarity signal, the first polarity signal is opposite in polarity than the second polarity signal.