发明名称 PROCESS FOR PRODUCING CHIP
摘要 A process for producing a chip in which plural ejection orifice arrays are arranged including conducting reduction projection exposure plural times to a wafer having a substrate and a photosensitive resin layer formed thereon while relatively moving positions of the wafer and a reticle to form ejection orifice array patterns in the resin layer, developing the patterns to form ejection orifice arrays in the resin layer, and dividing the wafer to form plural chips in which the plural ejection orifice arrays are arranged. The exposure is conducted once to form in the resin layer a first ejection orifice array pattern corresponding to partial ejection orifice arrays in an arranging direction thereof in one chip, a second ejection orifice array pattern corresponding to all ejection orifice arrays in one chip and a third ejection orifice array pattern corresponding to partial ejection orifice arrays in an arranging direction thereof in one chip.
申请公布号 US2014198157(A1) 申请公布日期 2014.07.17
申请号 US201414146203 申请日期 2014.01.02
申请人 CANON KABUSHIKI KAISHA 发明人 Tomizawa Keiji;Muraoka Chiaki;Kodoi Takuma
分类号 B41J2/16;B41J2/145 主分类号 B41J2/16
代理机构 代理人
主权项 1. A process for producing a chip in which plural ejection orifice arrays are arranged, the process comprising the steps of: conducting reduction projection exposure plural times to a wafer having a substrate and a photosensitive resin layer formed on the substrate while relatively moving positions of the wafer and a reticle to form ejection orifice array patterns in the photosensitive resin layer, developing the ejection orifice array patterns to form ejection orifice arrays in the photosensitive resin layer, and dividing the wafer having the photosensitive resin layer in which the ejection orifice arrays have been formed to form plural chips in which the plural ejection orifice arrays are arranged, wherein the reduction projection exposure is conducted once to form in the photosensitive resin layer a first ejection orifice array pattern corresponding to partial ejection orifice arrays in an arranging direction of ejection orifice arrays in one chip, a second ejection orifice array pattern corresponding to all ejection orifice arrays in another one chip and a third ejection orifice array pattern corresponding to partial ejection orifice arrays in an arranging direction of ejection orifice arrays in a further one chip.
地址 Tokyo JP