CRYSTAL LAYERED STRUCTURE AND LIGHT EMITTING ELEMENT

摘要

Provided are: a crystal layered structure which has a Ga2O3 substrate and a nitride semiconductor layer and is capable of providing a light emitting element having high light output; and a light emitting element which comprises this crystal layered structure. According to one embodiment of the present invention, there is provided a crystal layered structure (1) which comprises: a Ga2O3 substrate (2); a dielectric layer (3) which is formed on the Ga2O3 substrate (2) so as to partially cover the upper surface of the Ga2O3 substrate (2), and which has a refractive index difference of 0.15 or less with respect to the Ga2O3 substrate (2); and a nitride semiconductor layer (4) which is formed on the Ga2O3 substrate (2) with the dielectric layer (3) being interposed therebetween, and which is in contact with the dielectric layer (3) and a portion of the upper surface of the Ga2O3 substrate (2), said portion being not covered by the dielectric layer (3).