NITRIDE LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR

摘要

Provided is a light-emitting diode with a current injection modulation layer (250), in which a high resistance material is led so as to change conduction paths of injection currents. Steps for manufacturing a light-emitting diode comprise: respectively growing high resistance materials (such as InxAlyGal-x-yN) in an N-type conduction layer (210) or a P-type conduction layer (240); etching in a reacting furnace by means of high-temperature H2 until part of the current conduction paths are exposed; and then respectively growing an N-type conduction layer or a P-type conduction layer to cover. A method for manufacturing a light-emitting diode can form a current injection modulation layer without a secondary extension, so that injection currents have better expanding paths in an N-type conduction layer and a P-type conduction layer, and can be more effectively and uniformly diffused and injected into an active area layer, thereby increasing the luminous efficiency.