<p>A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.</p>
申请公布号
WO2014110197(A1)
申请公布日期
2014.07.17
申请号
WO2014US10772
申请日期
2014.01.09
申请人
SENSOR ELECTRONIC TECHNOLOGY, INC.
发明人
GASKA, REMIGIJUS;SHATALOV, MAXIM, S.;LUNEV, ALEX;DOBRINSKY, ALEXANDER;YANG, JINWEI;SHUR, MICHAEL