发明名称 |
Method of Measuring a Characteristic |
摘要 |
During a multiple patterning process every nth element of the pattern is removed. The removal of the elements of the patterns happens after the pattern has been printed into the radiation sensitive material or etched into substrate. Advantageously, the original mask is not varied, and another exposure step is used to remove the elements of the pattern. |
申请公布号 |
US2014199634(A1) |
申请公布日期 |
2014.07.17 |
申请号 |
US201414213649 |
申请日期 |
2014.03.14 |
申请人 |
ASML Netherlands B.V. |
发明人 |
QUAEDACKERS Johannes Anna;HINNEN Paul Christiaan;KIERS Antonie Gaston Marie;LEEWIS Christian Marinus |
分类号 |
G03F7/00 |
主分类号 |
G03F7/00 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method comprising:
exposing a repeating pattern in a layer of resist on a substrate; transferring the pattern into the substrate; modifying an element of the pattern; projecting a beam of radiation onto the pattern; and measuring the intensity distribution of the reflected radiation beam. |
地址 |
Veldhoven NL |