Self Aligned Contact Formation

摘要

The present disclosure relates to methods of forming a self-aligned contact and related apparatus. In some embodiments, the method forms a plurality of gate lines interspersed between a plurality of dielectric lines, wherein the gate lines and the dielectric lines extend in a first direction over an active area. One or more of the plurality of gate lines are into a plurality of gate line sections aligned in the first direction. One or more of the plurality of dielectric lines are cut into a plurality of dielectric lines sections aligned in the first direction. A dummy isolation material is deposited between adjacent dielectric sections in the first direction and between adjacent gate line sections in the first direction. One or more self-aligned metal contacts are then formed by replacing a part of one or more of the plurality of dielectric lines over the active area with a contact metal.

主权项

1. A method of forming a self-aligned contact, comprising:
forming a plurality of gate lines interspersed between a plurality of dielectric lines, wherein the gate lines and the dielectric lines extend in a first direction over an active area; cutting one or more of the plurality of gate lines into a plurality of gate line sections aligned in the first direction; cutting one or more of the plurality of dielectric lines into a plurality of dielectric lines sections aligned in the first direction; depositing a dummy isolation material between adjacent dielectric sections in the first direction and between adjacent gate line sections in the first direction; and forming one or more self-aligned metal contacts by replacing a part of one or more of the plurality of dielectric lines over the active area with a contact metal.