| 发明名称 |
TRENCH SHIELDING STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD |
| 摘要 |
A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the shielding structure is placed beneath a control pad. In another embodiment, the shielding structure is placed beneath a control runner. |
| 申请公布号 |
US2014197483(A1) |
申请公布日期 |
2014.07.17 |
| 申请号 |
US201414216914 |
申请日期 |
2014.03.17 |
| 申请人 |
Semiconductor Components Industries, LLC |
发明人 |
Burke Peter A.;Grivna Gordon M.;Venkatraman Prasad |
| 分类号 |
H01L29/423 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
Phoenix AZ US |
