| 摘要 |
<p>Provided is an exposure method for reducing exposure defocusing in a wafer edge area, the exposure method comprising: maintaining exposure energy and focal length in the central area of a wafer, and adjusting the exposure energy and focal length of the wafer edge area, and in particular, adjusting during exposure the exposure focal length of the wafer edge area toward a positive direction, thus reducing the exposure energy. Also provided is a photolithographic process comprising the exposure method. By means of adjusting the focal length and energy of a wafer edge during exposure, the exposure defocusing problem on wafer edge is solved by merely optimizing the photolithographic process without updating an advanced machine or replacing photoresist, thus having a short validation period and incurring no extra cost.</p> |
