POWER SEMICONDUCTOR DEVICE

摘要

The purpose of the present invention is to provide a technique by which it is possible to suppress discontinuity in a collector voltage waveform during current interruption. A power semiconductor device is provided with: an n-type base region (1); a p-type base region (2) formed on the n-type base region (1); and an n-type emitter region (3) and a p-type contact region (4) formed adjacent to each other on the p-type base region (2). The power semiconductor device is also provided with: a plurality of trench-gate electrodes (6) formed embedded in a groove passing from the surface of each n-type emitter region (3) to the n-type base region (1), and interposed by a gate-insulating film (5); and an emitter electrode (8) connected to each n-type emitter region (3b) and each p-type contact region (4b), except for the n-type emitter region (3a) and the p-type contact region (4a) at each pitch set in advance in a position between the trench-gate electrodes (6).