METHOD FOR MANUFACTURING GRAPHENE WITHOUT CATALYST AND METHOD FOR MANUFACTURING LIGHT EMITTING DIODES USING THE SAME METHOD

摘要

The present invention relates to a method for manufacturing a device after a large graphene electrode grown without a catalyst is directly grown on a compound semiconductor layer made of GaN or mixed nitride of Ga and another metal. In the present invention, a graphene grown with PECVD without the catalyst at relatively low temperatures, which is able to be applied to a nitride semiconductor, is formed. According to the present invention, a graphene with a uniform property is easily grown on a large substrate of 2 inches or more as a transfer method is not required, unlike a graphene grown with a catalyst. Also, the performance of the device is easily maximized by applying various pre-processes to a graphene-combined nitride semiconductor substrate, by not distinguishing the substrate.