SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

According to one embodiment, a semiconductor device manufacturing method includes depositing a silicon film above a semiconductor substrate, forming an insulating film which includes silicon oxide or silicon nitride on the silicon film, forming a physical guide having a depressed portion above the insulating film, forming a directed self-assembly material layer which includes a first polymer and a second polymer in the depressed portion of the physical guide, phase-separating the directed self-assembly material layer into a first region which includes the first polymer and a second region which includes the second polymer, removing the second region, processing the insulating film by using the physical guide and the first region as masks, and transferring a pattern corresponding to the second region to the insulating film. Further, the silicon film is processed by using the pattern transferred onto the insulating film as a mask.

主权项

1. A semiconductor device manufacturing method, comprising:
depositing a silicon film above a semiconductor substrate; forming an insulating film, which includes silicon oxide or silicon nitride, on the silicon film; forming a physical guide, having at least one depressed portion, above the insulating film; forming a directed self-assembly material layer which includes a first polymer and a second polymer in the depressed portion of the physical guide; phase-separating the directed self-assembly material layer into a first region including the first polymer and a second region including the second polymer; removing the second region; processing the insulating film by using the physical guide and the first region as masks, and transferring a pattern corresponding to the second region to the insulating film; and processing the silicon film by using the pattern transferred onto the insulating film as a mask.