| 主权项 |
1. A method for fabricating an ESD protection device, comprising:
providing a substrate with an input/output (I/O) region and a non I/O region; forming a gate electrode of a core device overlying the substrate in the non I/O region and a gate electrode of an ESD protection device overlying the substrate in the I/O region; forming a first photoresist film on the substrate, wherein the first photoresist film masks the I/O region while reveals the non I/O region, and wherein the first photoresist film comprises at least an opening positioned adjacent to, immediately or not, the gate electrode of the ESD protection device in the I/O region; and using the first photoresist film as an implant mask, performing a core pocket implantation process to implant dopants of a second conductivity type into the I/O region through the opening and into the non I/O region, thereby forming a core pocket doping region in the I/O region, and core pocket doping regions in the non I/O region. |
