发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device which has improved heat dissipation properties and improved insulation properties is obtained. A semiconductor device which is provided with: a semiconductor element (2); a lead frame (4), to one surface of which the semiconductor element (2) is bonded; a first insulating layer (5) that is arranged on the other surface of the lead frame (4); and a metal base plate (6) to which the lead frame (4) is connected with the first insulating layer (5) being interposed therebetween. The outer peripheral portion of the first insulating layer is positioned inside the outer peripheral portion of the metal base plate, and the outer peripheral portion of the first insulating layer (5) including the electric field concentrated portion in the outer peripheral portion of the lead frame (4) is covered with a second insulating layer (7) that has higher moisture resistance and higher insulation properties than the first insulating layer (5).
申请公布号 WO2014109208(A1) 申请公布日期 2014.07.17
申请号 WO2013JP84203 申请日期 2013.12.20
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 SHIOTA HIROKI;YAMATAKE ATSUSHI;SUGA KENICHI;YAMAGUCHI YOSHIHIRO;UEDA TETSUYA
分类号 H01L23/12;H01L23/36 主分类号 H01L23/12
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