HIGH-SPEED REMOTE PLASMA ATOMIC LAYER DEPOSITION APPARATUS

摘要

A high-speed remote plasma atomic layer deposition apparatus according to the present invention comprises: a source gas unit for supplying gas to a substrate; a plasma unit for generating plasma for the substrate; and a gas suction unit provided between the source gas unit and the plasma unit, for sucking the source gas, and the substrate can be provided to enable a relative movement in the direction intersecting the longitudinal direction of at least one of the source gas unit, the plasma unit or the gas suction unit. Thus, the fast throughput can be secured by depositing an atomic layer by using the space division type source gas unit and plasma unit.