发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
<p>PROBLEM TO BE SOLVED: To relax concentration of injection charge to inhibit breakage of an element.SOLUTION: A semiconductor device comprises a p-type deep layer 18 which has contact with a p-type high-impurity layer 10 and a p-type column 4a and which is arranged so as to overlap between an end P1 to an end of the p-type high-impurity layer 10 when viewed from above the semiconductor device. In addition, a p-type impurity concentration of the p-type deep layer 18 is made higher than that of a p-type layer 5 and lower than that of the p-type high-impurity layer 10. By providing such p-type deep layer 18, concentration of injection charge at the time of a recovery operation can be relaxed and breakage of an element can be inhibited.</p> |
申请公布号 |
JP2014132636(A) |
申请公布日期 |
2014.07.17 |
申请号 |
JP20130214758 |
申请日期 |
2013.10.15 |
申请人 |
DENSO CORP |
发明人 |
TOSHIDA YUMA;AKAGI NOZOMI;HAYASHI KEITA |
分类号 |
H01L29/78;H01L21/329;H01L21/336;H01L29/06;H01L29/861;H01L29/868 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|