发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A method of manufacturing a semiconductor light emitting device includes forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices. |
申请公布号 |
US2014199796(A1) |
申请公布日期 |
2014.07.17 |
申请号 |
US201414150713 |
申请日期 |
2014.01.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM Tae Hun;KIM Sung Joon;LEE Su Yeol;LEE Seung Hwan;JANG Tae Sung |
分类号 |
H01L33/46;H01L21/78;H01L33/52 |
主分类号 |
H01L33/46 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of manufacturing a semiconductor light emitting device, the method comprising:
forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices. |
地址 |
Suwon-si KR |