| 发明名称 |
MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS |
| 摘要 |
A polymer for resist use is obtainable from a monomer having formula (1) wherein R1 is H, CH3 or CF3 and R2 is H or an acid labile group. A resist composition comprising the polymer displays a high sensitivity and a high dissolution contrast during both alkaline development and organic solvent development.; |
| 申请公布号 |
US2014199631(A1) |
申请公布日期 |
2014.07.17 |
| 申请号 |
US201314108549 |
申请日期 |
2013.12.17 |
| 申请人 |
Shin-Etsu Chemical Co., Ltd. |
发明人 |
Sagehashi Masayoshi;Hasegawa Koji;Katayama Kazuhiro |
| 分类号 |
G03F7/038;C07D309/12;C07C69/533 |
主分类号 |
G03F7/038 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A monomer having the general formula (1): wherein R1 is hydrogen, methyl or trifluoromethyl and R2 is hydrogen or an acid labile group. |
| 地址 |
Tokyo JP |
