发明名称 Semiconductor Device
摘要 An object of one embodiment of the present invention to provide a latch circuit includes a level shifter and a buffer in which transistors each including a channel region formed in an oxide semiconductor film are connected in series. Thus, data can be held in the latch circuit even when power is not supplied.
申请公布号 US2014197873(A1) 申请公布日期 2014.07.17
申请号 US201414211426 申请日期 2014.03.14
申请人 Semiconductor Energy Laboratory Co., Ltd. 发明人 Nishijima Tatsuji
分类号 H03K19/0175 主分类号 H03K19/0175
代理机构 代理人
主权项 1. (canceled)
地址 Kanagawa-ken JP
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