发明名称 |
NON-VOLATILE REGISTER WITH MAGNETIC TUNNELING JUNCTIONS AND WITH EDGE DETECTOR FOR LOW READ DISTURB OF THE MTJS |
摘要 |
<p>A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices (124; 126) are configured to store a logical 0 or a logical 1, and are coupled to drive an output node (132) to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flipflop (104) is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector (134) coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.</p> |
申请公布号 |
WO2014110566(A1) |
申请公布日期 |
2014.07.17 |
申请号 |
WO2014US11466 |
申请日期 |
2014.01.14 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
SUN, ZHENYU;MADALA, RAGHU SAGAR;GOVINDASWAMY, SENTHIL KUMAR;YUEN, KENDRICK H.;WU, WENQING;WANG, PEIYUAN |
分类号 |
G11C11/16;G11C14/00;H03K3/037 |
主分类号 |
G11C11/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|