METHOD FOR PRODUCING THIN FILM ON NANOCRYSTALLINE MAX

摘要

The present invention relates to making a thin film on Ti2AlN MAX, and provides a method wherein, in contrast to the prior art in which an amorphous Ti2AlN thin film that has been formed by sputtering or the like is given crystalline properties by being subjected to a subsequent heat treatment at a high temperature of about 800°C, a thin film is made directly into a crystalline thin film while being vapour-deposited at relatively low temperature. According to the present invention, outstanding crystalline thin films can be made at a relatively low temperature of between 400 and 500°C by making a Ti2AlN target and by causing the ionisation of metal particles which are eroded and emerge from the target through the use of a plasma which is discharged upon applying an impulse voltage, and hence the range of choice of base materials is widened and the range of uses of thin films on Ti2AlN MAX is widened.