| 发明名称 |
METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES INCLUDING AN INSULATIVE MATERIAL ON A SEMICONDUCTIVE MATERIAL, AND RELATED SEMICONDUCTOR DEVICE STRUCTURES AND SEMICONDUCTOR DEVICES |
| 摘要 |
A method of forming a semiconductor device structure. The method comprises forming an insulative material on a semiconductive material, and microwave annealing at least an interface between the insulative material and the semiconductive material. Additional methods of forming a semiconductor device structure, and related semiconductor device structures and a semiconductor device are also described. |
| 申请公布号 |
US2014199822(A1) |
申请公布日期 |
2014.07.17 |
| 申请号 |
US201313741672 |
申请日期 |
2013.01.15 |
| 申请人 |
Shrotri Kunal |
发明人 |
Shrotri Kunal |
| 分类号 |
H01L21/02;H01L21/762 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method of forming a semiconductor device structure, comprising:
forming an insulative material on a semiconductive material; and microwave annealing at least an interface between the insulative material and the semiconductive material. |
| 地址 |
Boise ID US |
