HARMONIC RESIST MODEL FOR USE IN A LITHOGRAPHIC APPARATUS AND A DEVICE MANUFACTURING METHOD

摘要

A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.

主权项

1. A method for determining an image of a mask pattern in a resist coated on a substrate, the method comprising:
determining an aerial image of the mask pattern at substrate level; and transforming the aerial image into a resist image that is representative of the image of the mask pattern in the resist, the aerial image being transformed into the resist image using a model that includes at least two convolution kernels, the transforming including convolving the aerial image with the at least two convolution kernels, wherein the at least two convolution kernels are selected such that the transformation of the aerial image into the resist image has the properties of rotational and mirror symmetry conservation.