LASER DEVICE

摘要

The present invention provides a light source for light circuits on a silicon platform. A vertical laser cavity is formed by a gain region arranged between a first mirror structure and a second mirror structure, both acting as mirrors, by forming a grating region including an active material in a silicon layer in a semiconductor structure or wafer structure. A waveguide for receiving light from the region of the mirrors is formed within or to be connected to the region of the mirrors, and functions as an output coupler for the VCL. Thereby, vertical lasing modes are coupled to lateral in-plane modes of the in-plane waveguide formed in the silicon layer, and light can be provided to e.g. photonic circuits on a SOI or CMOS substrate in the silicon.

主权项

1. A laser comprising:
a cavity defined by a first mirroring structure and a second mirroring structure formed in semiconductor layers on a substrate and being arranged to support light oscillation along an oscillation axis normal to a plane of the substrate, wherein: the first mirroring structure is in the form of a grating formed in a first semiconductor material layer; an active gain material is provided within the first mirroring structure; and electric contacts for drawing an electric current through the active gain material to facilitate lasing, wherein the electric contacts for drawing an electric current through the active gain material are positioned in the first mirroring structure on opposite sides of the active gain material as seen in the plane of the layers.