| 摘要 |
<p>The present invention generally relates to a thin film semiconductor device having multiple semiconductor layers. The layers can be tailored such that the Fermi level and the charge neutrality level are different in the layers. By tailoring the layers, the electron trapping location can be selected so that the thin film semiconductor device has high mobility. While description will be made with reference to a TFT, it is to be understood that the invention has broader utility, such as with any thin film semiconductor device.</p> |
