| 摘要 |
<p>An excellent and high-grade carbon film is formed on a surface of a material to be processed at a high speed. A film forming vacuum chamber includes: a substrate to which a predetermined voltage is applied by substrate voltage applying means in a vacuum chamber that can be depressurized to a predetermined degree of vacuum; and a plasma generating source that has at least one carbon raw material substrate that is arranged to face the substrate, forms plasma from an atmosphere for discharge generation introduced into the vacuum chamber based on adjustment electric power output to the carbon raw material substrate by a pulse power supply on the carbon raw material substrate, and discharges electricity together with a carbon raw material from the carbon raw material substrate toward the material to be processed that is held on the substrate, a carbon film is processed and formed on a surface of the material to be processed by a sputtering method, the pulse power supply and the substrate voltage applying means are connected to an oscillation apparatus for a gate signal by a mechanism that adjusts an initial voltage, and each of the pulse power supply and the substrate power supply has an adjustment circuit that controls each of a pulse width, delay timing from application of a voltage to a target to application of a substrate voltage, a frequency, and a voltage in a predetermined range.</p> |
