发明名称 TEMPERATURE CONTROL METHOD, CONTROL DEVICE, AND PLASMA TREATMENT DEVICE
摘要 <p>A temperature control method is provided for controlling a plasma processing apparatus that is capable of changing a temperature setting for each step of a plasma process including multiple steps. The method includes a transfer step of performing an entry process for transferring a workpiece into a processing chamber of the plasma processing apparatus and/or an exit process for transferring the workpiece out of the processing chamber, a process execution step of executing the plasma process including multiple steps, and a temperature control step of performing a first temperature control and/or a second temperature control. The first temperature control includes controlling a temperature to a temperature setting of a next process according to a time execution of the plasma process is completed, and the second temperature control includes controlling the temperature to the temperature setting of the next process in parallel with the entry process and/or the exit process.</p>
申请公布号 KR20140090180(A) 申请公布日期 2014.07.16
申请号 KR20147012222 申请日期 2012.10.30
申请人 TOKYO ELECTRON LIMITED 发明人 MIURA TATSUYA;OZAWA WATARU;FUKASAWA KIMIHIRO;KAZAMA KAZUNORI
分类号 H01L21/3065;C23C16/46;C23C16/50;C23C16/52;H01L21/205;H01L21/324 主分类号 H01L21/3065
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