| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a large diameter GaN single crystal substrate, in which the plane orientation of a main plane is other than (0001) and (000-1) and the dislocation density in the main plane is substantially uniform, and to provide a method for manufacturing the same. <P>SOLUTION: In the GaN single crystal substrate 20p, the area of the main plane 20pm is ≥10 cm<SP>2</SP>, the plane orientation of the main plane 20pm is inclined at an angle of 65°-85° with respect to the (0001) plane or (000-1)plane 20c, and the distribution of the dislocation density in the main plane 20pm is substantially uniform, for example, the variation of the dislocation density to the average dislocation density in the main plane 20pm is within ±100%. <P>COPYRIGHT: (C)2011,JPO&INPIT |
