| 摘要 |
The purpose of the present invention is to provide a composition of a lower layer resist film which can provide high etching selectivity, can perform exfoliation in a milder condition than the conventional method, and can form a fine pattern. To achieve the above purpose, provided in the present invention is a composition for forming a metal oxide containing film, which contains: substance (A), a metal oxide containing compound A_1 which is obtained by conducting either hydrolysis or condensation or both on one or more hydrolysable metal oxide compounds, indicated as formula (A-1) below L(OR^0A)_a0(OR^1A)_a1(O)_a2; and substance (B), an aromatic compound which generates a hydroxyl group by either heat or acid or both, indicated as formula (B-1) below. |
