| 摘要 |
The present invention relates to a wafer manufacturing apparatus, which uniformly controls etching temperature and etching concentration, and a wafer manufacturing method using the same. The present invention provides a wafer manufacturing apparatus which includes a lapping device which polishes the surface of a wafer; a cleaning bath which stores a high temperature cleaning solution which cleans the wafer which passes through the lapping device; and an etching bath which stores an etching solution which etches the wafer which passes through the cleansing bath. Also, the present invention provides a wafer manufacturing method which includes a lapping step which polishes the surface of a wafer; a cleaning step which dips the wafer which passes through the lapping step in a high temperature cleaning solution; and an etching step which dips the wafer which passes through the cleaning step in an etching solution. |
