发明名称 PLASMA GENERATOR AND CVD DEVICE
摘要 <p>The present invention provides a plasma generation apparatus that is able to efficiently output a large amount of functional metal material particle gas, which is used for forming a functional insulating film on a processing object material. A plasma generation apparatus 100 according to the present invention includes an electrode cell and a housing (16) that encloses the electrode cell. The electrode cell includes a first electrode (3), a discharge space (6), a second electrode (1), dielectrics (2a ,Pb), and a pass-through (PH) formed in a central portion in a plan view. An insulating tube (21) having a cylindrical shape is arranged within the pass-through (PH). Ejection holes (21x) are formed in a side surface of the cylindrical shape. The plasma generation apparatus (100) further includes a precursor supply part (201) that is connected to a hollow portion (21A) of the insulating tube (21) and configured to supply a metal precursor.</p>
申请公布号 EP2755453(A1) 申请公布日期 2014.07.16
申请号 EP20120829740 申请日期 2012.04.19
申请人 TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION 发明人 TABATA YOICHIRO;WATANABE KENSUKE
分类号 H05H1/24;C23C16/452;C23C16/503;C23C16/505;H01J37/32;H01L21/31 主分类号 H05H1/24
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