| 摘要 |
<p>Disclosed is an apparatus for page unit clustering on a multi level cell flash memory, wherein two bits are stored in each cell, an upper bit of the two bits forms a most significant bit (MSB) page, and a lower bit forms a least significant bit (LSB) page. A clustering unit binds a first MSB page and a first LSB page within a first channel to form a first clustering page. An error correction code (ECC) unit applies different error correction codes (ECC) to the first MSB page and the first LSB page. A control unit stores second parity bits exceeding a first spare area excluding a first data area of the first MSB page among first parity bits, which are generated after encoding data in the first MSB page within the first clustering page, in a second spare area excluding a second data area of the first LSB page within the first clustering page. According to the present invention, error imbalance existing between the MSB page and the LSB page can be solved by changing the structure of a clustered page, and the entire reliability of a solid state device (SSD) can be improved by extending the life of the MSB page.</p> |
