发明名称 |
Method and structure for forming on-chip quality capacitors with etsoi transistors |
摘要 |
<p>An ETSOI transistor and a capacitor are formed respectively in a transistor and capacitor region thereof by etching through an ETSOI and thin BOX layers in a replacement gate HK/MG flow. The capacitor formation is compatible with an ETSOI replacement gate CMOS flow. A low resistance capacitor electrode makes it possible to obtain a high quality capacitor or varactor. The lack of topography during dummy gate patterning are achieved by lithography in combination of which is accompanied with appropriate etch.</p> |
申请公布号 |
GB201410069(D0) |
申请公布日期 |
2014.07.16 |
申请号 |
GB20140010069 |
申请日期 |
2012.09.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
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