An improved high capacity low cost multi-state magnetic memory

摘要

A multi-state current-switching magnetic memory element comprises a stack of two or more magnetic tunneling junctions (MTJs). Each MTJ has a free layer (1111, 1123) and is separated from other MTJs in the stack by a seeding layer (1115) formed upon an isolation layer (1113), the stack for storing more than one bit of information. Different levels of current applied to the memory element causes switching to different states. The free layers of the MTJs each have a unique composition, thereby causing each MTJ to switch states at a unique switching current. The invention also comprises a method of manufacturing a multi-state magnetic memory element.