摘要 |
Provided is a method of patterning a block copolymer layer, which comprises the steps of: providing a base material including a guide pattern; forming a block copolymer layer on the base material including the guide pattern; and inducing assembly of the block copolymer according to the guide pattern to form n/2 individual areas. The guide pattern includes a block copolymer patterning area having a 90 degrees deflection portion, wherein an outer apex and an inner apex of the 90 degree deflection portion are rounded to have a curvature radius of r1 and r2, respectively, and a width (W) of the patterning area and the curvature radius of r1 and r2 satisfy an inequation 1. In the inequation 1, n is an even number as the number of interfaces between the individual areas. |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY |
发明人 |
KIM, MI JEONG;HAN, IN TAEK;HUH, JUNE;JEONG, SEONG JUN;KOH, HAENG DEOG;PARK, YOUN JUNG |