发明名称 METHODS OF PATTERNING BLOCK COPOLYMER LAYERS AND PATTERNED STRUCTURES
摘要 Provided is a method of patterning a block copolymer layer, which comprises the steps of: providing a base material including a guide pattern; forming a block copolymer layer on the base material including the guide pattern; and inducing assembly of the block copolymer according to the guide pattern to form n/2 individual areas. The guide pattern includes a block copolymer patterning area having a 90 degrees deflection portion, wherein an outer apex and an inner apex of the 90 degree deflection portion are rounded to have a curvature radius of r1 and r2, respectively, and a width (W) of the patterning area and the curvature radius of r1 and r2 satisfy an inequation 1. In the inequation 1, n is an even number as the number of interfaces between the individual areas.
申请公布号 KR20140090018(A) 申请公布日期 2014.07.16
申请号 KR20130002220 申请日期 2013.01.08
申请人 SAMSUNG ELECTRONICS CO., LTD.;INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY 发明人 KIM, MI JEONG;HAN, IN TAEK;HUH, JUNE;JEONG, SEONG JUN;KOH, HAENG DEOG;PARK, YOUN JUNG
分类号 H01L21/027 主分类号 H01L21/027
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