LIGHT EMITTING DIODE AND FABRICATING METHOD OF THE SAME
摘要
A light emitting diode according to the present invention comprises a semiconductor laminate structure on which a first semiconductor layer, a second semiconductor layer, and an active layer are laminated. The light emitting diode includes a transparent conductive layer which includes a first transparent conductive layer which is formed on the second semiconductor layer and a second transparent conductive layer which is formed on the first transparent conductive layer to have different conductivity. Surface resistance and contact resistance are reduced by forming a high quality transparent conductive layer. A driving voltage is reduced by improving electron mobility. Luminous efficiency is improved by easily distributing a current.
申请公布号
KR20140089886(A)
申请公布日期
2014.07.16
申请号
KR20130001877
申请日期
2013.01.08
申请人
SEOUL SEMICONDUCTOR CO., LTD.
发明人
SHIN, CHAN SEOB;LIM, HYOUNG JIN;KIM, KYOUNG WAN;YOON, YEO JIN;JACOB J. RICHARDSON;DANIEL ESTRADA;EVAN C. O'HARA;HAORAN SHI