Ferroelectric capacitor and a semiconductor device

摘要

A ferroelectric capacitor (30) includes a lower electrode (33), a ferroelectric film (34) provided over the lower electrode (33) and having a perovskite-type structure and an upper electrode (35) provided over the ferroelectric film (34). The ferroelectric film (34) includes a first ferroelectric film part (34A, 34C) having a first crystal system and formed along at least one interface with at least one of the lower electrode (33) and the upper electrode (35) and a second ferroelectric film part (34B) having a second crystal system that is different from the first crystal system.