发明名称 |
COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR MANUFACTURING SAME, PATTERN FORMING METHOD, AND RESIST UNDERLAYER FILM |
摘要 |
A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180° C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask. |
申请公布号 |
KR20140090150(A) |
申请公布日期 |
2014.07.16 |
申请号 |
KR20147009348 |
申请日期 |
2012.10.02 |
申请人 |
JSR CORPORATION |
发明人 |
KOUMURA KAZUHIKO;MINEGISHI SHINYA;MORI TAKASHI;YASUDA KYOYU;TAKIMOTO YOSHIO;NAKAFUJI SHINYA;KIMURA TORU |
分类号 |
G03F7/11;G03F7/26 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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