VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF FORMING THE SAME

摘要

The present invention provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes a barrier lowering part between a metal-containing layer and a semiconductor layer, thereby reducing a Schottky barrier height between the metal-containing layer and the semiconductor layer compared to a Schottky barrier height between a metal silicide layer and the semiconductor layer. Therefore, a current flow between the metal-containing layer and the semiconductor layer is improved, thereby increasing an on current and improving an operation speed.