| 摘要 |
The present invention relates to a gas supply apparatus and a substrate processing apparatus, and more particularly to a gas supply apparatus in a process of depositing an atom layer using a purge gas and a substrate processing apparatus to which the gas supply apparatus is applied. A gas supply apparatus according to an embodiment of the present invention includes: a process gas supply pipe for supplying a process gas from at least one process gas supply source into a chamber, the process gas supply pipe being provided with a purge gas node where a purge gas converges in a passage between the process gas supply source and the purge gas node and a bypass nose where the process gas is bypassed from the passage between the process gas supply source and the chamber to an outside of the chamber; a purge gas supply pipe connected to the purge gas node, for sending the purge gas to a passage of the process gas supply pipe; a filter located between the process gas supply source and the purge gas node, for receiving the process gas from the process gas supply source to filter the process gas and discharging the filtered process gas through an output end thereof; a bypass pipe connected to the bypass node, for discharging the process gas in the process gas supply pipe to an outside of the chamber; and a bypass control valve located at the bypass node, for supplying the process gas in the process gas supply pipe or discharging the process gas to the bypass pipe. |
